Voltage-current Characteristics of Multi-dimensional Semiconductor Devices*
نویسنده
چکیده
|The steady state drift-diiusion model for the ow of electrons and holes in semiconductors is sim-pliied by perturbation techniques. The simpliications amount to assuming zero space charge and low injection. The limiting problems are solved and explicit formulas for the voltage-current characteristics of bipolar devices can be obtained. As examples, the pn-diode, the bipolar transistor and the thyristor are discussed. While the classical results of a one-dimensional analysis are connrmed in the case of the diode, some important eeects of the higher dimensionality appear for the bipolar transistor.
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